منابع مشابه
Characterization of ITO/CdO/glass thin films evaporated by electron beam technique.
A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm resul...
متن کاملAn Investigation of SILAR Grown CdO Thin Films
Cadmium oxide (CdO) thin films were deposited on the glass substrate by the modified SILAR method, using cadmium acetate dihydrate and ammonium hydroxide aqueous solution as precursors. The structural, surface morphological, elemental composition and optical properties of the deposited films were investigated via X-Ray Diffraction (XRD), scanning electron microscopy, EDAX,...
متن کاملCalculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films
Spintronics attracts much attention because of the potential to build novel spin-based devices which are superior to nowadays charge-based microelectronic devices. Silicon, the main element of microelectronics, is promising for spin-driven applications. Understanding the details of the spin propagation in silicon structures is a key for building novel spin-based nanoelectronic devices. We inves...
متن کاملElectron mobility enhancement in ZnO thin films via surface modification by carboxylic acids
Related Articles Investigation of electrical transport in anodized single TiO2 nanotubes Appl. Phys. Lett. 102, 043105 (2013) Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach Appl. Phys. Lett. 102, 033110 (2013) Piezoresistance of nano-scale silicon up to 2GPa in tension Appl. Phys. Lett. 102, 031911 (2013) Electr...
متن کاملElectron mobility and spin lifetime enhancement in strained ultra-thin silicon films
Spintronics attracts much attention because of the potential to build novel spin-based devices which are superior to nowadays charge-based microelectronic devices. Silicon, the main element of microelectronics, is promising for spin-driven applications. Understanding the details of the spin propagation in silicon structures is a key for building novel spin-based nanoelectronic devices. We inves...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3562141